title
  • image of Single FETs, MOSFETs>TP65H070G4LSGB-TR
  • image of Single FETs, MOSFETs>TP65H070G4LSGB-TR
  • Part number TP65H070G4LSGB-TR
    Product classification Single FETs, MOSFETs
    description GANFET N-CH 650V 29A QFN8X8
    encapsulation Tape & Reel (TR)
    quantity 3181
    price $5.7400
    RoHS status YES
    specifications
    PDF(1)
    TYPEDESCRIPTION
    MfrTransphorm
    SeriesSuperGaN®
    PackageTape & Reel (TR)
    Product StatusACTIVE
    Package / Case8-PowerTDFN
    Mounting TypeSurface Mount
    Operating Temperature-55°C ~ 150°C (TJ)
    TechnologyGaNFET (Gallium Nitride)
    FET TypeN-Channel
    Current - Continuous Drain (Id) @ 25°C29A (Tc)
    Rds On (Max) @ Id, Vgs85mOhm @ 16A, 10V
    Power Dissipation (Max)96W (Tc)
    Vgs(th) (Max) @ Id4.6V @ 700µA
    Supplier Device Package8-PQFN (8x8)
    Drive Voltage (Max Rds On, Min Rds On)10V
    Vgs (Max)±20V
    Drain to Source Voltage (Vdss)650 V
    Gate Charge (Qg) (Max) @ Vgs8.4 nC @ 10 V
    Input Capacitance (Ciss) (Max) @ Vds600 pF @ 400 V