specifications
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| TYPE | DESCRIPTION |
| Mfr | Tagore Technology |
| Series | - |
| Package | Tray |
| Product Status | ACTIVE |
| Package / Case | 30-PowerWFQFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Half Bridge) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25°C | 6.5A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 28pF @ 400V |
| Rds On (Max) @ Id, Vgs | 472mOhm @ 500mA, 6V |
| Gate Charge (Qg) (Max) @ Vgs | 0.75nC @ 6V |
| Vgs(th) (Max) @ Id | 2.5V @ 2.8mA |
| Supplier Device Package | 30-QFN (8x10) |