title
  • image of Single FETs, MOSFETs>TP44100SG
  • image of Single FETs, MOSFETs>TP44100SG
  • Part number TP44100SG
    Product classification Single FETs, MOSFETs
    description GAN FET HEMT 650V .118OHM 22QFN
    encapsulation Tape & Reel (TR)
    quantity 3169
    price $3.3000
    RoHS status NO
    specifications
    PDF(1)
    TYPEDESCRIPTION
    MfrTagore Technology
    Series-
    PackageTape & Reel (TR)
    Product StatusACTIVE
    Package / Case22-PowerVFQFN
    Mounting TypeSurface Mount
    Operating Temperature-55°C ~ 150°C (TJ)
    TechnologyGaNFET (Gallium Nitride)
    FET TypeN-Channel
    Current - Continuous Drain (Id) @ 25°C19A (Tc)
    Rds On (Max) @ Id, Vgs118mOhm @ 500mA, 6V
    Vgs(th) (Max) @ Id2.5V @ 11mA
    Supplier Device Package22-QFN (5x7)
    Drive Voltage (Max Rds On, Min Rds On)0V, 6V
    Vgs (Max)±20V
    Drain to Source Voltage (Vdss)650 V
    Gate Charge (Qg) (Max) @ Vgs3 nC @ 6 V
    Input Capacitance (Ciss) (Max) @ Vds110 pF @ 400 V