specifications
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TYPE | DESCRIPTION |
Mfr | Toshiba Electronic Devices and Storage Corporation |
Series | DTMOSIV |
Package | Tape & Reel (TR) |
Product Status | ACTIVE |
Package / Case | 4-VSFN Exposed Pad |
Mounting Type | Surface Mount |
Operating Temperature | 150°C |
Technology | MOSFET (Metal Oxide) |
FET Type | N-Channel |
Current - Continuous Drain (Id) @ 25°C | 25A (Ta) |
Rds On (Max) @ Id, Vgs | 150mOhm @ 7.5A, 10V |
Power Dissipation (Max) | 180W (Tc) |
Vgs(th) (Max) @ Id | 4.5V @ 1.2mA |
Supplier Device Package | 4-DFN-EP (8x8) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs (Max) | ±30V |
Drain to Source Voltage (Vdss) | 600 V |
Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds | 2400 pF @ 300 V |