title
  • image of Single FETs, MOSFETs>SIHB6N80AE-GE3
  • image of Single FETs, MOSFETs>SIHB6N80AE-GE3
  • Part number SIHB6N80AE-GE3
    Product classification Single FETs, MOSFETs
    description E SERIES POWER MOSFET D2PAK (TO-
    encapsulation Tube
    quantity 1240
    price $1.6000
    RoHS status YES
    specifications
    PDF(1)
    TYPEDESCRIPTION
    MfrVishay / Siliconix
    SeriesE
    PackageTube
    Product StatusACTIVE
    Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
    Mounting TypeSurface Mount
    Operating Temperature-55°C ~ 150°C (TJ)
    TechnologyMOSFET (Metal Oxide)
    FET TypeN-Channel
    Current - Continuous Drain (Id) @ 25°C5A (Tc)
    Rds On (Max) @ Id, Vgs950mOhm @ 2A, 10V
    Power Dissipation (Max)62.5W (Tc)
    Vgs(th) (Max) @ Id4V @ 250µA
    Supplier Device PackageTO-263 (D2PAK)
    Drive Voltage (Max Rds On, Min Rds On)10V
    Vgs (Max)±30V
    Drain to Source Voltage (Vdss)800 V
    Gate Charge (Qg) (Max) @ Vgs22.5 nC @ 10 V
    Input Capacitance (Ciss) (Max) @ Vds422 pF @ 100 V