title
  • image of Single FETs, MOSFETs>SIDR220EP-T1-RE3
  • image of Single FETs, MOSFETs>SIDR220EP-T1-RE3
  • image of Single FETs, MOSFETs>SIDR220EP-T1-RE3
  • image of Single FETs, MOSFETs>SIDR220EP-T1-RE3
  • Part number SIDR220EP-T1-RE3
    Product classification Single FETs, MOSFETs
    description N-CHANNEL 25 V (D-S) 175C MOSFET
    encapsulation Tape & Reel (TR)
    quantity 6188
    price $1.5700
    RoHS status NO
    specifications
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    PDF(2)
    TYPEDESCRIPTION
    MfrVishay / Siliconix
    SeriesTrenchFET® Gen IV
    PackageTape & Reel (TR)
    Product StatusACTIVE
    Package / CasePowerPAK® SO-8
    Mounting TypeSurface Mount
    Operating Temperature-55°C ~ 175°C (TJ)
    TechnologyMOSFET (Metal Oxide)
    FET TypeN-Channel
    Current - Continuous Drain (Id) @ 25°C92.8A (Ta), 415A (Tc)
    Rds On (Max) @ Id, Vgs0.58mOhm @ 20A, 10V
    Power Dissipation (Max)6.25W (Ta), 415W (Tc)
    Vgs(th) (Max) @ Id2.1V @ 250µA
    Supplier Device PackagePowerPAK® SO-8DC
    Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
    Vgs (Max)+16V, -12V
    Drain to Source Voltage (Vdss)25 V
    Gate Charge (Qg) (Max) @ Vgs200 nC @ 10 V
    Input Capacitance (Ciss) (Max) @ Vds10850 pF @ 10 V