specifications
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| TYPE | DESCRIPTION |
| Mfr | Quest Semi |
| Series | - |
| Package | Tube |
| Product Status | ACTIVE |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 2A, 20V |
| Power Dissipation (Max) | 88W |
| Vgs(th) (Max) @ Id | 4V @ 10mA |
| Supplier Device Package | PG-TO247-3 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 2V, 4V |
| Drain to Source Voltage (Vdss) | 1700 V |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 1200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 142 pF @ 1000 V |