specifications
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| TYPE | DESCRIPTION |
| Mfr | NXP Semiconductors |
| Series | TrenchMOS™ |
| Package | Bulk |
| Product Status | ACTIVE |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11.8A (Tj) |
| Rds On (Max) @ Id, Vgs | 10.5mOhm @ 12A, 10V |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 17.6 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1335 pF @ 16 V |