specifications
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| TYPE | DESCRIPTION |
| Mfr | Sanyo Semiconductor/onsemi |
| Series | - |
| Package | Tube |
| Product Status | ACTIVE |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 99A (Tc) |
| Rds On (Max) @ Id, Vgs | 28.5mOhm @ 45A, 18V |
| Power Dissipation (Max) | 348W (Tc) |
| Vgs(th) (Max) @ Id | 4.3V @ 15.5mA |
| Supplier Device Package | TO-247-3 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
| Vgs (Max) | +22V, -8V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 164 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3480 pF @ 325 V |
| Qualification | AEC-Q101 |