title
  • image of Bipolar RF Transistors>NESG2030M04-A
  • image of Bipolar RF Transistors>NESG2030M04-A
  • image of Bipolar RF Transistors>NESG2030M04-A
  • image of Bipolar RF Transistors>NESG2030M04-A
  • Part number NESG2030M04-A
    Product classification Bipolar RF Transistors
    description RF TRANS NPN 2.3V 60GHZ M04
    encapsulation Bulk
    quantity 200
    price
    RoHS status NO
    specifications
    PDF(1)
    PDF(2)
    TYPEDESCRIPTION
    MfrCEL (California Eastern Laboratories)
    Series-
    PackageBulk
    Product StatusOBSOLETE
    Package / CaseSOT-343F
    Mounting TypeSurface Mount
    Transistor TypeNPN
    Operating Temperature150°C (TJ)
    Gain16dB
    Power - Max80mW
    Current - Collector (Ic) (Max)35mA
    Voltage - Collector Emitter Breakdown (Max)2.3V
    DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 5mA, 2V
    Frequency - Transition60GHz
    Noise Figure (dB Typ @ f)0.9dB ~ 1.1dB @ 2GHz
    Supplier Device PackageM04