title
  • image of Bipolar RF Transistors>NE85633-T1B-A
  • image of Bipolar RF Transistors>NE85633-T1B-A
  • Part number NE85633-T1B-A
    Product classification Bipolar RF Transistors
    description SAME AS 2SC3356 NPN SILICON AMPL
    encapsulation Tape & Reel (TR)
    quantity 27200
    price $1.8000
    RoHS status YES
    specifications
    PDF(1)
    TYPEDESCRIPTION
    MfrCEL (California Eastern Laboratories)
    Series-
    PackageTape & Reel (TR)
    Product StatusOBSOLETE
    Package / CaseTO-236-3, SC-59, SOT-23-3
    Mounting TypeSurface Mount
    Transistor TypeNPN
    Operating Temperature150°C (TJ)
    Gain11.5dB
    Power - Max200mW
    Current - Collector (Ic) (Max)100mA
    Voltage - Collector Emitter Breakdown (Max)12V
    DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 20mA, 10V
    Frequency - Transition7GHz
    Noise Figure (dB Typ @ f)1.1dB @ 1GHz
    Supplier Device Package3-MINIMOLD