title
  • image of Bipolar Transistor Arrays, Pre-Biased>MUN5211DW1T1
  • image of Bipolar Transistor Arrays, Pre-Biased>MUN5211DW1T1
  • image of Bipolar Transistor Arrays, Pre-Biased>MUN5211DW1T1
  • image of Bipolar Transistor Arrays, Pre-Biased>MUN5211DW1T1
  • Part number MUN5211DW1T1
    Product classification Bipolar Transistor Arrays, Pre-Biased
    description TRANS 2NPN PREBIAS 0.25W SOT363
    encapsulation Cut Tape (CT)
    quantity 200
    price
    RoHS status NO
    specifications
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    TYPEDESCRIPTION
    MfrSanyo Semiconductor/onsemi
    Series-
    PackageCut Tape (CT)
    Product StatusOBSOLETE
    Package / Case6-TSSOP, SC-88, SOT-363
    Mounting TypeSurface Mount
    Transistor Type2 NPN - Pre-Biased (Dual)
    Power - Max250mW
    Current - Collector (Ic) (Max)100mA
    Voltage - Collector Emitter Breakdown (Max)50V
    Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA
    Current - Collector Cutoff (Max)500nA
    DC Current Gain (hFE) (Min) @ Ic, Vce35 @ 5mA, 10V
    Resistor - Base (R1)10kOhms
    Resistor - Emitter Base (R2)10kOhms
    Supplier Device PackageSC-88/SC70-6/SOT-363