title
  • image of Single FETs, MOSFETs>IXTH13N110
  • image of Single FETs, MOSFETs>IXTH13N110
  • image of Single FETs, MOSFETs>IXTH13N110
  • image of Single FETs, MOSFETs>IXTH13N110
  • Part number IXTH13N110
    Product classification Single FETs, MOSFETs
    description MOSFET N-CH 1100V 13A TO247
    encapsulation Tube
    quantity 200
    price
    RoHS status NO
    specifications
    PDF(1)
    TYPEDESCRIPTION
    MfrLittelfuse / IXYS RF
    SeriesMegaMOS™
    PackageTube
    Product StatusOBSOLETE
    Package / CaseTO-247-3
    Mounting TypeThrough Hole
    Operating Temperature-55°C ~ 150°C (TJ)
    TechnologyMOSFET (Metal Oxide)
    FET TypeN-Channel
    Current - Continuous Drain (Id) @ 25°C13A (Tc)
    Rds On (Max) @ Id, Vgs920mOhm @ 500mA, 10V
    Power Dissipation (Max)360W (Tc)
    Vgs(th) (Max) @ Id4.5V @ 250µA
    Supplier Device PackageTO-247 (IXTH)
    Drive Voltage (Max Rds On, Min Rds On)10V
    Vgs (Max)±20V
    Drain to Source Voltage (Vdss)1100 V
    Gate Charge (Qg) (Max) @ Vgs195 nC @ 10 V
    Input Capacitance (Ciss) (Max) @ Vds5650 pF @ 25 V