specifications
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| TYPE | DESCRIPTION |
| Mfr | IR (Infineon Technologies) |
| Series | HEXFET® |
| Package | Tube |
| Product Status | OBSOLETE |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 960mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 2.7A |
| Input Capacitance (Ciss) (Max) @ Vds | 400pF @ 15V |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 2.7A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 6nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.25V @ 250µA |
| Supplier Device Package | 6-TSOP |