specifications
PDF(1)
| TYPE | DESCRIPTION |
| Mfr | GeneSiC Semiconductor |
| Series | SiC Schottky MPS™ |
| Package | Tube |
| Product Status | ACTIVE |
| Package / Case | TO-247-2 |
| Mounting Type | Through Hole |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 4577pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 122A |
| Supplier Device Package | TO-247-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1700 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 60 A |
| Current - Reverse Leakage @ Vr | 40 µA @ 1700 V |