title
  • image of Single FETs, MOSFETs>FBG20N04ASH
  • image of Single FETs, MOSFETs>FBG20N04ASH
  • Part number FBG20N04ASH
    Product classification Single FETs, MOSFETs
    description GAN FET HEMT 200V 4A 4FSMD-A
    encapsulation Bulk
    quantity 225
    price $392.7500
    RoHS status NO
    specifications
    PDF(1)
    TYPEDESCRIPTION
    MfrEPC Space
    Seriese-GaN®
    PackageBulk
    Product StatusACTIVE
    Package / Case4-SMD, No Lead
    Mounting TypeSurface Mount
    Operating Temperature-55°C ~ 150°C (TJ)
    TechnologyGaNFET (Gallium Nitride)
    FET TypeN-Channel
    Current - Continuous Drain (Id) @ 25°C4A (Tc)
    Rds On (Max) @ Id, Vgs130mOhm @ 4A, 5V
    Vgs(th) (Max) @ Id2.8V @ 1mA
    Supplier Device Package4-SMD
    Drive Voltage (Max Rds On, Min Rds On)5V
    Vgs (Max)+6V, -4V
    Drain to Source Voltage (Vdss)200 V
    Gate Charge (Qg) (Max) @ Vgs3 nC @ 5 V
    Input Capacitance (Ciss) (Max) @ Vds150 pF @ 100 V