specifications
PDF(1)
PDF(2)
TYPE | DESCRIPTION |
Mfr | EPC |
Series | eGaN® |
Package | Tape & Reel (TR) |
Product Status | ACTIVE |
Package / Case | Die |
Mounting Type | Surface Mount |
Operating Temperature | -40°C ~ 150°C (TJ) |
Technology | GaNFET (Gallium Nitride) |
FET Type | N-Channel |
Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
Rds On (Max) @ Id, Vgs | 16mOhm @ 10A, 5V |
Vgs(th) (Max) @ Id | 2.5V @ 2mA |
Supplier Device Package | Die |
Drive Voltage (Max Rds On, Min Rds On) | 5V |
Vgs (Max) | +6V, -4V |
Drain to Source Voltage (Vdss) | 40 V |
Gate Charge (Qg) (Max) @ Vgs | 2.5 nC @ 5 V |
Input Capacitance (Ciss) (Max) @ Vds | 300 pF @ 20 V |