title
  • image of FET, MOSFET Arrays>CAB530M12BM3
  • image of FET, MOSFET Arrays>CAB530M12BM3
  • Part number CAB530M12BM3
    Product classification FET, MOSFET Arrays
    description SIC 2N-CH 1200V 530A MODULE
    encapsulation Tray
    quantity 207
    price $945.9100
    RoHS status NO
    specifications
    PDF(1)
    PDF(2)
    TYPEDESCRIPTION
    MfrWolfspeed
    Series-
    PackageTray
    Product StatusACTIVE
    Package / CaseModule
    Mounting TypeChassis Mount
    Configuration2 N-Channel
    Operating Temperature-40°C ~ 150°C (TJ)
    TechnologySilicon Carbide (SiC)
    Drain to Source Voltage (Vdss)1200V (1.2kV)
    Current - Continuous Drain (Id) @ 25°C530A
    Input Capacitance (Ciss) (Max) @ Vds39600pF @ 800V
    Rds On (Max) @ Id, Vgs3.55mOhm @ 530A, 15V
    Gate Charge (Qg) (Max) @ Vgs1362nC @ 4V
    Vgs(th) (Max) @ Id3.6V @ 140mA
    Supplier Device PackageModule