specifications
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| TYPE | DESCRIPTION |
| Mfr | Toshiba Electronic Devices and Storage Corporation |
| Series | - |
| Package | Bulk |
| Product Status | OBSOLETE |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 1mA, 1A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 2000 @ 1A, 2V |
| Supplier Device Package | TO-92MOD |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 120 V |
| Power - Max | 900 mW |