title
  • image of Single Bipolar Transistors>2N2907AUB1
  • image of Single Bipolar Transistors>2N2907AUB1
  • Part number 2N2907AUB1
    Product classification Single Bipolar Transistors
    description RAD-HARD 60 V, 0.6 A PNP TRANSIS
    encapsulation Tray
    quantity 300
    price $112.7400
    RoHS status YES
    specifications
    TYPEDESCRIPTION
    MfrSTMicroelectronics
    Series-
    PackageTray
    Product StatusACTIVE
    Package / Case3-SMD, No Lead
    Mounting TypeSurface Mount
    Transistor TypePNP
    Operating Temperature-65°C ~ 200°C (TJ)
    Vce Saturation (Max) @ Ib, Ic1.6V @ 50mA, 500mA
    Current - Collector Cutoff (Max)50nA
    DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 10V
    Supplier Device PackageUB
    Current - Collector (Ic) (Max)500 mA
    Voltage - Collector Emitter Breakdown (Max)60 V
    Power - Max1.8 W