specifications
| TYPE | DESCRIPTION |
| Mfr | GeneSiC Semiconductor |
| Series | - |
| Package | Bulk |
| Product Status | ACTIVE |
| Package / Case | Twin Tower |
| Mounting Type | Chassis Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | Schottky |
| Diode Configuration | 1 Pair Common Cathode |
| Current - Average Rectified (Io) (per Diode) | 150A |
| Supplier Device Package | Twin Tower |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 35 V |
| Voltage - Forward (Vf) (Max) @ If | 650 mV @ 150 A |
| Current - Reverse Leakage @ Vr | 8 mA @ 20 V |