规格
PDF(1)
| TYPE | DESCRIPTION |
| Mfr | onsemi |
| Series | - |
| Package | Tube |
| Product Status | Active |
| Part Status | Active |
| Technology | Silicon Carbide (SiC) |
| Configuration | 4 N-Channel (Full Bridge) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25°C | 31A (Tc) |
| Rds On (Max) @ Id, Vgs | 44mOhm @ 15A, 18V |
| Vgs(th) (Max) @ Id | 4V @ 7.5mA |
| Gate Charge (Qg) (Max) @ Vgs | 58nC @ 18V |
| Input Capacitance (Ciss) (Max) @ Vds | 1215pF @ 400V |
| Power - Max | 65.2W (Tj) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Package / Case | 13-SSIP Exposed Pad, Formed Leads |
| Supplier Device Package | APM16 |