specifications
PDF(1)
| TYPE | DESCRIPTION |
| Mfr | Toshiba Semiconductor and Storage |
| Series | - |
| Package | Cut Tape (CT) |
| Product Status | Active |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 57A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 29A, 18V |
| Vgs(th) (Max) @ Id | 5V @ 3mA |
| Gate Charge (Qg) (Max) @ Vgs | 65 nC @ 18 V |
| Vgs (Max) | +25V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 2288 pF @ 400 V |
| FET Feature | - |
| Power Dissipation (Max) | 156W (Tc) |
| Operating Temperature | 175°C |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | TOLL |
| Package / Case | 8-PowerSFN |