title
  • image of Bipolar Transistor Arrays>MMDT5551_R1_00701
  • image of Bipolar Transistor Arrays>MMDT5551_R1_00701
  • Part number MMDT5551_R1_00701
    Product classification Bipolar Transistor Arrays
    description NPN HIGH VOLTAGE TRANSISTOR
    encapsulation Cut Tape (CT)
    quantity 200
    price $0.0426
    RoHS status YES
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    specifications
    PDF(1)
    TYPEDESCRIPTION
    MfrPanjit International Inc.
    Series-
    PackageCut Tape (CT)
    Product StatusActive
    Part StatusActive
    Transistor Type2 NPN
    Current - Collector (Ic) (Max)600mA
    Voltage - Collector Emitter Breakdown (Max)160V
    Vce Saturation (Max) @ Ib, Ic200mV @ 5mA, 50mA
    Current - Collector Cutoff (Max)50nA (ICBO)
    DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 10mA, 5V
    Power - Max200mW
    Frequency - Transition300MHz
    Operating Temperature-55°C ~ 150°C (TJ)
    Grade-
    Qualification-
    Mounting TypeSurface Mount
    Package / Case6-TSSOP, SC-88, SOT-363
    Supplier Device PackageSOT-363