specifications
PDF(1)
| TYPE | DESCRIPTION |
| Mfr | STMicroelectronics |
| Series | - |
| Package | Tube |
| Product Status | Active |
| Part Status | Active |
| Technology | Silicon Carbide (SiC) |
| Configuration | 6 N-Channel (Three Phase Inverter) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 60.5mOhm @ 20A, 18V |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 100nC @ 18V |
| Input Capacitance (Ciss) (Max) @ Vds | 2086pF @ 800V |
| Power - Max | - |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Package / Case | 32-PowerDIP Module (1.264", 32.10mm) |
| Supplier Device Package | ACEPACK DMT-32 |