specifications
| TYPE | DESCRIPTION |
| Mfr | Inventchip |
| Series | - |
| Package | Tube |
| Product Status | Active |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 72A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Rds On (Max) @ Id, Vgs | 53mOhm @ 20A, 18V |
| Vgs(th) (Max) @ Id | 4.5V @ 7.5mA |
| Gate Charge (Qg) (Max) @ Vgs | 94.7 nC @ 18 V |
| Vgs (Max) | +20V, -5V |
| Input Capacitance (Ciss) (Max) @ Vds | 2000 pF @ 600 V |
| FET Feature | - |
| Power Dissipation (Max) | 249W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-4 |
| Package / Case | TO-247-4 |