specifications
| TYPE | DESCRIPTION |
| Mfr | Inventchip |
| Series | - |
| Package | Tube |
| Product Status | Active |
| Part Status | Active |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) | 29.3A |
| Voltage - Forward (Vf) (Max) @ If | 1.55 V @ 10 A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 10 µA @ 650 V |
| Capacitance @ Vr, F | 398pF @ 1V, 1MHz |
| Mounting Type | Through Hole |
| Package / Case | TO-220-2 |
| Supplier Device Package | TO-220-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |