specifications
PDF(1)
| TYPE | DESCRIPTION |
| Mfr | Infineon Technologies |
| Series | - |
| Package | Tube |
| Product Status | Active |
| Part Status | Active |
| Technology | Silicon Carbide (SiC) |
| Configuration | 2 N-Channel (Half Bridge) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 190A |
| Rds On (Max) @ Id, Vgs | 5.56mOhm @ 190A, 18V |
| Vgs(th) (Max) @ Id | 4.55V @ 60mA |
| Gate Charge (Qg) (Max) @ Vgs | 420nC @ 18V |
| Input Capacitance (Ciss) (Max) @ Vds | 10100pF @ 850V |
| Power - Max | 20mW |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Through Hole |
| Package / Case | 11-PowerDIP Module (2.091", 53.10mm) |
| Supplier Device Package | PG-MDIP-11-1 |