title
  • image of RF FETs, MOSFETs>FBG10N30BSH
  • image of RF FETs, MOSFETs>FBG10N30BSH
  • image of RF FETs, MOSFETs>FBG10N30BSH
  • image of RF FETs, MOSFETs>FBG10N30BSH
  • Part number FBG10N30BSH
    Product classification RF FETs, MOSFETs
    description GAN FET HEMT 100V 30A 4FSMD-B
    encapsulation Bulk
    quantity 240
    price $365.4800
    RoHS status YES
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    specifications
    PDF(1)
    TYPEDESCRIPTION
    MfrEPC Space, LLC
    Series-
    PackageBulk
    Product StatusActive
    Part StatusActive
    TechnologyGaN HEMT
    ConfigurationN-Channel
    Frequency-
    Gain-
    Voltage - Test50 V
    Current Rating (Amps)-
    Noise Figure-
    Current - Test30 A
    Power - Output-
    Voltage - Rated100 V
    Grade-
    Qualification-
    Mounting TypeSurface Mount
    Package / Case4-SMD, No Lead
    Supplier Device Package4-SMD