specifications
PDF(1)
| TYPE | DESCRIPTION |
| Mfr | EPC Space, LLC |
| Series | - |
| Package | Bulk |
| Product Status | Active |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 1A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Rds On (Max) @ Id, Vgs | 580mOhm @ 1A, 5V |
| Vgs(th) (Max) @ Id | 2.5V @ 140µA |
| Vgs (Max) | - |
| Input Capacitance (Ciss) (Max) @ Vds | 22 pF @ 30 V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | 4-SMD |
| Package / Case | 4-SMD, No Lead |