specifications
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| TYPE | DESCRIPTION |
| Mfr | Wolfspeed, Inc. |
| Series | - |
| Package | Box |
| Product Status | Active |
| Part Status | Active |
| Technology | Silicon Carbide (SiC) |
| Configuration | 2 N-Channel, Common Source (Half Bridge) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 1.051kA (Tc) |
| Rds On (Max) @ Id, Vgs | 1.7mOhm @ 800A, 15V |
| Vgs(th) (Max) @ Id | 3.9V @ 255mA |
| Gate Charge (Qg) (Max) @ Vgs | 2784nC @ 15V |
| Input Capacitance (Ciss) (Max) @ Vds | 94900pF @ 800V |
| Power - Max | 2.54kW (Tc) |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | - |