specifications
| TYPE | DESCRIPTION |
| Mfr | Central Semiconductor Corp |
| Series | - |
| Package | Tube |
| Product Status | Active |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1700 V |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tj) |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Rds On (Max) @ Id, Vgs | 80mOhm @ 10A, 15V |
| Vgs(th) (Max) @ Id | 2.6V @ 10mA (Typ) |
| Vgs (Max) | 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 850 pF @ 1000 V |
| FET Feature | - |
| Power Dissipation (Max) | 28W (Tj) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247 |
| Package / Case | TO-247-3 |