title
  • image of FET, MOSFET Arrays>BSS8402DW
  • image of FET, MOSFET Arrays>BSS8402DW
  • Part number BSS8402DW
    Product classification FET, MOSFET Arrays
    description 50V 3@10V,0.13A 500MV 1 N-CHANNE
    encapsulation Cut Tape (CT)
    quantity 3200
    price $0.0534
    RoHS status YES
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    specifications
    PDF(1)
    TYPEDESCRIPTION
    MfrShenzhen Slkormicro Semicon Co., Ltd.
    Series-
    PackageCut Tape (CT)
    Product StatusActive
    Part StatusActive
    TechnologyMOSFET (Metal Oxide)
    ConfigurationN and P-Channel
    FET Feature-
    Drain to Source Voltage (Vdss)50V
    Current - Continuous Drain (Id) @ 25°C130mA (Tc)
    Rds On (Max) @ Id, Vgs3Ohm @ 130mA, 10V, 5Ohm @ 130mA, 10V
    Vgs(th) (Max) @ Id1.5V @ 250µA, 2V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs7nC @ 4.5V, 1.77nC @ 4.5V
    Input Capacitance (Ciss) (Max) @ Vds42pF @ 25V, 30pF @ 30V
    Power - Max-
    Operating Temperature150°C (TJ)
    Grade-
    Qualification-
    Mounting TypeSurface Mount
    Package / Case6-TSSOP, SC-88, SOT-363
    Supplier Device PackageSOT-363