title
  • image of Bipolar RF Transistors>BFY90 TIN/LEAD
  • image of Bipolar RF Transistors>BFY90 TIN/LEAD
  • image of Bipolar RF Transistors>BFY90 TIN/LEAD
  • image of Bipolar RF Transistors>BFY90 TIN/LEAD
  • Part number BFY90 TIN/LEAD
    Product classification Bipolar RF Transistors
    description 15V 25MA 200MW TH TRANSISTOR-SMA
    encapsulation Box
    quantity 200
    price $4.3105
    RoHS status YES
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    specifications
    PDF(1)
    TYPEDESCRIPTION
    MfrCentral Semiconductor Corp
    Series-
    PackageBox
    Product StatusActive
    Part StatusActive
    Transistor TypeNPN
    Voltage - Collector Emitter Breakdown (Max)15V
    Frequency - Transition1.4GHz
    Noise Figure (dB Typ @ f)5.5dB @ 800MHz
    Gain23dB
    Power - Max200mW
    DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 25mA, 1V
    Current - Collector (Ic) (Max)25mA
    Operating Temperature-65°C ~ 200°C (TJ)
    Grade-
    Qualification-
    Mounting TypeThrough Hole
    Package / CaseTO-206AF, TO-72-4 Metal Can
    Supplier Device PackageTO-72