title
  • image of Bipolar RF Transistors>2N5179 TIN/LEAD
  • image of Bipolar RF Transistors>2N5179 TIN/LEAD
  • image of Bipolar RF Transistors>2N5179 TIN/LEAD
  • image of Bipolar RF Transistors>2N5179 TIN/LEAD
  • Part number 2N5179 TIN/LEAD
    Product classification Bipolar RF Transistors
    description 12V 50MA 200MW TH TRANSISTOR-SMA
    encapsulation Box
    quantity 200
    price $3.1001
    RoHS status YES
    captcha
    specifications
    TYPEDESCRIPTION
    MfrCentral Semiconductor Corp
    Series-
    PackageBox
    Product StatusActive
    Part StatusActive
    Transistor TypeNPN
    Voltage - Collector Emitter Breakdown (Max)12V
    Frequency - Transition2GHz
    Noise Figure (dB Typ @ f)4.5dB @ 200MHz
    Gain15dB
    Power - Max300mW
    DC Current Gain (hFE) (Min) @ Ic, Vce25 @ 3mA, 1V
    Current - Collector (Ic) (Max)50mA
    Operating Temperature-65°C ~ 200°C (TJ)
    Grade-
    Qualification-
    Mounting TypeThrough Hole
    Package / CaseTO-206AF, TO-72-4 Metal Can
    Supplier Device PackageTO-72