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  • image of Single Bipolar Transistors>2N3906
  • image of Single Bipolar Transistors>2N3906
  • Part number 2N3906
    Product classification Single Bipolar Transistors
    description 40V 625MW 100@10MA,1V 200MA PNP
    encapsulation Bag
    quantity 887
    price $0.1000
    RoHS status YES
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    specifications
    PDF(1)
    TYPEDESCRIPTION
    MfrShenzhen Slkormicro Semicon Co., Ltd.
    Series-
    PackageBag
    Product StatusActive
    Part StatusActive
    Transistor TypePNP
    Current - Collector (Ic) (Max)200 mA
    Voltage - Collector Emitter Breakdown (Max)40 V
    Vce Saturation (Max) @ Ib, Ic400mV @ 5mA, 50mA
    Current - Collector Cutoff (Max)100nA (ICBO)
    DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 10mA, 1V
    Power - Max625 mW
    Frequency - Transition250MHz
    Operating Temperature150°C (TJ)
    Grade-
    Qualification-
    Mounting TypeThrough Hole
    Package / CaseTO-226-3, TO-92-3 (TO-226AA)
    Supplier Device PackageTO-92